Influence of low-energy electron bombardment on the composition and structure of the gallium phosphide surface

Abstract

In the paper, the patterns of changes in the composition and structure of the surface layers of GaP(111) in bombardment by electrons with energies from 3 to 10 keV and doses in the range 1017 – 1020 cm–2 have been studied using the method of Auger electron spectroscopy and recording the angular dependence of the electron inelastic reflection coefficient. It was established that the surface layers of GaP were enriched with P atoms at E = 3 keV, and with Ga atoms at E = 10 keV. In both cases, the Ga atoms distribution profiles over the depth the sample were non-monotonic. The electron energy value at which an inversion of the surface composition took place was estimated. An analysis of the results obtained was given.

Keywords

• auger electron spectroscopy
• nanosized phase
• electron bombardment
• surface concentration of atoms