Journal of Low Power Electronics and Applications (Jan 2017)
On Improving Reliability of SRAM-Based Physically Unclonable Functions
Abstract
Physically unclonable functions (PUFs) have been touted for their inherent resistance to invasive attacks and low cost in providing a hardware root of trust for various security applications. SRAM PUFs in particular are popular in industry for key/ID generation. Due to intrinsic process variations, SRAM cells, ideally, tend to have the same start-up behavior. SRAM PUFs exploit this start-up behavior. Unfortunately, not all SRAM cells exhibit reliable start-up behavior due to noise susceptibility. Hence, design enhancements are needed for improving reliability. Some of the proposed enhancements in literature include fuzzy extraction, error-correcting codes and voting mechanisms. All enhancements involve a trade-off between area/power/performance overhead and PUF reliability. This paper presents a design enhancement technique for reliability that improves upon previous solutions. We present simulation results to quantify improvement in SRAM PUF reliability and efficiency. The proposed technique is shown to generate a 128-bit key in ≤0.2 μ s at an area estimate of 4538 μ m 2 with error rate as low as 10 − 6 for intrinsic error probability of 15%.
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