High-performance hysteresis-free perovskite transistors through anion engineering

Abstract

Progress on high-performance transistor employing perovskite channels has been limited to date. Here, Zhu et al. report hysteresis-free tin-based perovskite thin-film transistors with high hole mobility of 20 cm2V–1S–1, which can be integrated with commercial metal oxide transistors on a single chip.