AIP Advances (Nov 2015)

Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes

  • Irving Cortes-Mestizo,
  • Victor H. Méndez-García,
  • Joel Briones,
  • Manuel Perez-Caro,
  • Ravi Droopad,
  • Stefan McMurtry,
  • Michel Hehn,
  • François Montaigne,
  • Edgar Briones

DOI
https://doi.org/10.1063/1.4936792
Journal volume & issue
Vol. 5, no. 11
pp. 117238 – 117238-10

Abstract

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In this letter, self-switching nanochannels have been proposed as an enabling technology for energy gathering in the terahertz (THz) regime. Such devices combine their diode-like behavior and high-speed of operation in order to generate DC electrical power from high-frequency signals. By using finite-element simulations, we have improved the sensitivity of L-shaped and V-shaped nanochannels based on InAlAs/InGaAs samples. Since those devices combine geometrical effects with their rectifying properties at zero-bias, we have improved their performance by optimizing their shape. Results show nominal sensitivities at zero-bias in the order of 40 V−1 and 20 V−1, attractive values for harvesting applications with square-law rectifiers.