Synthesis of epitaxial LuN films

Guanhua Su; Shuling Xiang; Jiachang Bi; Fugang Qi; Peiyi Li; Shunda Zhang; Shaozhu Xiao; Ruyi Zhang; Zhiyang Wei; Yanwei Cao

Heliyon (Jul 2024)

Synthesis of epitaxial LuN films

Guanhua Su,
Shuling Xiang,
Jiachang Bi,
Fugang Qi,
Peiyi Li,
Shunda Zhang,
Shaozhu Xiao,
Ruyi Zhang,
Zhiyang Wei,
Yanwei Cao

Affiliations

Guanhua Su: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Shuling Xiang: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Jiachang Bi: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Fugang Qi: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Peiyi Li: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Shunda Zhang: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Shaozhu Xiao: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Ruyi Zhang: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Zhiyang Wei: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Yanwei Cao: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; Corresponding author.

Journal volume & issue: Vol. 10, no. 13
p. e33343

Abstract

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Epitaxy of rare-earth nitride films are crucial for studying their physical properties and offer significant potential for applications in spintronics and optoelectronics. However, synthesizing single-crystalline LuN presents significant challenges, leading to a limited understanding of its properties. In this study, we successfully achieved the epitaxial growth of (001)-oriented LuN films on YAlO3 (110) substrates by reactive magnetron sputtering epitaxy. Electrical transport measurement at low temperatures reveals that the LuN film exhibits semiconducting behavior between 300 K and 2 K, with an activation energy of approximately 0.01 eV. Notably, negative magnetoresistance was observed below 12 K, which can result from the defects and magnetic impurities in LuN films. Our results uncover the electronic and magnetic properties of epitaxial LuN films.

Published in Heliyon

ISSN: 2405-8440 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Science: Science (General); Social Sciences: Social sciences (General)
Website: https://www.cell.com/heliyon/home

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