Stability of SiN<sub>x</sub> Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Chi Zhang; Majiaqi Wu; Pengchang Wang; Maoliang Jian; Jianhua Zhang; Lianqiao Yang

doi:10.3390/nano11123363

Nanomaterials (Dec 2021)

Stability of SiN<sub>x</sub> Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Chi Zhang,
Majiaqi Wu,
Pengchang Wang,
Maoliang Jian,
Jianhua Zhang,
Lianqiao Yang

Affiliations

Chi Zhang: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Yanchang Road 149, Shanghai 200072, China
Majiaqi Wu: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Yanchang Road 149, Shanghai 200072, China
Pengchang Wang: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Yanchang Road 149, Shanghai 200072, China
Maoliang Jian: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Yanchang Road 149, Shanghai 200072, China
Jianhua Zhang: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Yanchang Road 149, Shanghai 200072, China
Lianqiao Yang: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Yanchang Road 149, Shanghai 200072, China

DOI: https://doi.org/10.3390/nano11123363
Journal volume & issue: Vol. 11, no. 12
p. 3363

Abstract

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In this paper, the environmental stability of silicon nitride (SiNx) films deposited at 80 °C by plasma-enhanced chemical vapor deposition was studied systematically. X-ray photoelectron spectroscopy and Fourier transform infrared reflection were used to analyze the element content and atomic bond structure of the amorphous SiNx films. Variation of mechanical and optical properties were also evaluated. It is found that SiNx deposited at low temperature is easily oxidized, especially at elevated temperature and moisture. The hardness and elastic modulus did not change significantly with the increase of oxidation. The changes of the surface morphology, transmittance, and fracture extensibility are negligible. Finally, it is determined that SiNx films deposited at low-temperature with proper processing parameters are suitable for thin-film encapsulation of flexible devices.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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