A two-step process for growth of highly oriented Sb2Te3 using sputtering

Yuta Saito; Paul Fons; Leonid Bolotov; Noriyuki Miyata; Alexander V. Kolobov; Junji Tominaga

doi:10.1063/1.4948536

AIP Advances (Apr 2016)

A two-step process for growth of highly oriented Sb2Te3 using sputtering

Yuta Saito,
Paul Fons,
Leonid Bolotov,
Noriyuki Miyata,
Alexander V. Kolobov,
Junji Tominaga

Affiliations

Yuta Saito: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan
Paul Fons: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan
Leonid Bolotov: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan
Noriyuki Miyata: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan
Alexander V. Kolobov: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan
Junji Tominaga: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan

DOI: https://doi.org/10.1063/1.4948536
Journal volume & issue: Vol. 6, no. 4
pp. 045220 – 045220-5

Abstract

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A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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