Growth of AlGaN Film on Si (111) Substrate

Abstract

At present, the applications of AlxGa1−xN are extensive, such as for visible-blind ultraviolet detectors, laser diodes, light emitting diodes (LEDs) and HEMTs. In this paper, Al0.25Ga0.75N and Al0.32Ga0.68N films have been grown on 2 in Si (iii) substrates by MOCVD. The low-temperature (6 K) photoluminescence (PL) spectrum and XRD rocking curve measurements have been employed to study the crystal quality of samples, and the phonon replica peak can be observed, which indicate that the samples have better quality in a small-localized region. The surface morphology of samples was investigated by AFM and the result of wavy surface agrees with the deduction from XRD rocking curve measurements. The sheet resistance mappings have been shown, and it indicates the nonuniformity of AlGaN film on Si (iii) will increase sharply as the Al content increases.