Nature Communications (Jan 2020)

Antisymmetric linear magnetoresistance and the planar Hall effect

  • Yishu Wang,
  • Patrick A. Lee,
  • D. M. Silevitch,
  • F. Gomez,
  • S. E. Cooper,
  • Y. Ren,
  • J.-Q. Yan,
  • D. Mandrus,
  • T. F. Rosenbaum,
  • Yejun Feng

DOI
https://doi.org/10.1038/s41467-019-14057-6
Journal volume & issue
Vol. 11, no. 1
pp. 1 – 8

Abstract

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Magnetoresitance (MR) is a tool to study electronic transport and spin order in metals. Here, the authors demonstrate two different microscopic origins of antisymmetric linear MR from both Zeeman-split Fermi surface and anomalous electron velocity.