Electric control of exchange bias in Co/FeOx bilayer by resistive switching

Lujun Wei; Jiangtao Qu; Rongkun Zheng; Ruobai Liu; Yuan Yuan; Ji Wang; Liang Sun; Biao You; Wei Zhang; Qingyu Xu; Jun Du

doi:10.1063/1.5129506

AIP Advances (Jan 2020)

Electric control of exchange bias in Co/FeOx bilayer by resistive switching

Lujun Wei,
Jiangtao Qu,
Rongkun Zheng,
Ruobai Liu,
Yuan Yuan,
Ji Wang,
Liang Sun,
Biao You,
Wei Zhang,
Qingyu Xu,
Jun Du

Affiliations

Lujun Wei: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Jiangtao Qu: School of Physics and Nano Institute, The University of Sydney, NSW 2006, Australia
Rongkun Zheng: School of Physics and Nano Institute, The University of Sydney, NSW 2006, Australia
Ruobai Liu: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Yuan Yuan: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Ji Wang: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Liang Sun: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Biao You: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Wei Zhang: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Qingyu Xu: School of Physics, Southeast University, Nanjing 211189, China
Jun Du: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China

DOI: https://doi.org/10.1063/1.5129506
Journal volume & issue: Vol. 10, no. 1
pp. 015306 – 015306-6

Abstract

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Two types of electric control of exchange bias (EB) by resistive switching (RS), i.e. conductive-filament-RS (type I) and interface-barrier-RS (type II) were observed in the Si/SiO2Ti/Pt/FeOx/Co/ITO multilayer devices, which were fabricated by magnetron sputtering. It is difficult for the type I device to control EB, which may be due to that the quantity of conductive filaments is not enough to modify the antiferromagnetic structure of FeOx near the Co/FeOx interface. However, the electric control of EB can be accomplished in the type II device. Compared with low-resistance-state (LRS), the exchange bias field (HE) increases a little but the coercivity (HC) increases significantly at high-resistance-state (HRS). We consider that the migration of the oxygen vacancies under different voltages is able to mediate the interfacial barrier height, leading to the bipolar RS effect and the change of EB as well. This provides a way for designing new types of spintronic devices based on electric control.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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