InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss

Hsun-Ming Chang; Philip Chan; Norleakvisoth Lim; Vincent Rienzi; Haojun Zhang; Daniel A. Cohen; Michael J. Gordon; Steven P. DenBaars; Shuji Nakamura

doi:10.3390/cryst12091230

Crystals (Sep 2022)

InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss

Hsun-Ming Chang,
Philip Chan,
Norleakvisoth Lim,
Vincent Rienzi,
Haojun Zhang,
Daniel A. Cohen,
Michael J. Gordon,
Steven P. DenBaars,
Shuji Nakamura

Affiliations

Hsun-Ming Chang: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Philip Chan: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Norleakvisoth Lim: Department of Chemical Engineering, University of California, Santa Barbara, CA 93106, USA
Vincent Rienzi: Materials Department, University of California, Santa Barbara, CA 93106, USA
Haojun Zhang: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Daniel A. Cohen: Materials Department, University of California, Santa Barbara, CA 93106, USA
Michael J. Gordon: Department of Chemical Engineering, University of California, Santa Barbara, CA 93106, USA
Steven P. DenBaars: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Shuji Nakamura: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA

DOI: https://doi.org/10.3390/cryst12091230
Journal volume & issue: Vol. 12, no. 9
p. 1230

Abstract

Read online

InGaN based c-plane blue LDs on strain relaxed template (SRT) with a reduced absorption loss was demonstrated. The loss is reduced from 27 cm−1 to 20 cm−1. Due to the lower loss, threshold current density is improved from 51.1 kA/cm2 to 43.7 kA/cm2, and slope efficiency is also increased by a factor of 1.22. The absorption loss from decomposition layer (DL) in SRT is confirmed to be a major extra loss source by both experimental and simulation results. With a higher indium content in buffer and waveguide layers, optical leakage into DL can be suppressed.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

About the journal

Abstract

Keywords