Nature Communications (Jun 2020)
Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials
- Qingyong Ren,
- Chenguang Fu,
- Qinyi Qiu,
- Shengnan Dai,
- Zheyuan Liu,
- Takatsugu Masuda,
- Shinichiro Asai,
- Masato Hagihala,
- Sanghyun Lee,
- Shuki Torri,
- Takashi Kamiyama,
- Lunhua He,
- Xin Tong,
- Claudia Felser,
- David J. Singh,
- Tiejun Zhu,
- Jiong Yang,
- Jie Ma
Affiliations
- Qingyong Ren
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University
- Chenguang Fu
- Max Planck Institute for Chemical Physics of Solids
- Qinyi Qiu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University
- Shengnan Dai
- Materials Genome Institute, Shanghai University
- Zheyuan Liu
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University
- Takatsugu Masuda
- Neutron Science Laboratory, Institute for Solid State Physics, University of Tokyo
- Shinichiro Asai
- Neutron Science Laboratory, Institute for Solid State Physics, University of Tokyo
- Masato Hagihala
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
- Sanghyun Lee
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
- Shuki Torri
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
- Takashi Kamiyama
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
- Lunhua He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Xin Tong
- Spallation Neutron Source Science Center
- Claudia Felser
- Max Planck Institute for Chemical Physics of Solids
- David J. Singh
- Department of Chemistry and Department of Physics and Astronomy, University of Missouri-Columbia
- Tiejun Zhu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University
- Jiong Yang
- Materials Genome Institute, Shanghai University
- Jie Ma
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University
- DOI
- https://doi.org/10.1038/s41467-020-16913-2
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 9
Abstract
Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering.
