Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

ChengDa Tsai; Ikai Lo; YingChieh Wang; ChenChi Yang; HongYi Yang; HueiJyun Shih; HuiChun Huang; Mitch  M. C. Chou; Louie Huang; Binson Tseng

doi:10.3390/cryst9060308

Crystals (Jun 2019)

Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

ChengDa Tsai,
Ikai Lo,
YingChieh Wang,
ChenChi Yang,
HongYi Yang,
HueiJyun Shih,
HuiChun Huang,
Mitch M. C. Chou,
Louie Huang,
Binson Tseng

Affiliations

ChengDa Tsai: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Ikai Lo: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
YingChieh Wang: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
ChenChi Yang: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
HongYi Yang: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
HueiJyun Shih: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
HuiChun Huang: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Mitch M. C. Chou: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Louie Huang: Advanced Semiconductor Engineering, Inc., Kaohsiung 811, Taiwan
Binson Tseng: Advanced Semiconductor Engineering, Inc., Kaohsiung 811, Taiwan

DOI: https://doi.org/10.3390/cryst9060308
Journal volume & issue: Vol. 9, no. 6
p. 308

Abstract

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Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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