APL Photonics (Apr 2020)

InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

  • Z. Loghmari,
  • J.-B. Rodriguez,
  • A. N. Baranov,
  • M. Rio-Calvo,
  • L. Cerutti,
  • A. Meguekam,
  • M. Bahriz,
  • R. Teissier,
  • E. Tournié

DOI
https://doi.org/10.1063/5.0002376
Journal volume & issue
Vol. 5, no. 4
pp. 041302 – 041302-4

Abstract

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We present InAs/AlSb quantum cascade lasers (QCLs) monolithically integrated on an on-axis (001) Si substrate. The lasers emit near 8 μm with threshold current densities of 0.92–0.95 kA/cm2 at 300 K for 3.6-mm-long devices and operate in pulsed mode up to 410 K. QCLs of the same design grown for comparison on a native InAs substrate demonstrated a threshold current density of 0.75 kA/cm2 and the same maximum operating temperature. The low threshold current density of the QCLs grown on Si makes them suitable for photonic integrated sensor implementation.