IEEE Access (Jan 2023)

X-Band CMOS Rectifier With 4% Efficiency at −35 dBm for Wireless Power Transmission

  • Troy Buhr,
  • Aydin I. Karsilayan,
  • Jose Silva-Martinez,
  • Christopher Rodenbeck,
  • Brian Tierney,
  • Yanghyo Kim

DOI
https://doi.org/10.1109/ACCESS.2023.3237647
Journal volume & issue
Vol. 11
pp. 6792 – 6801

Abstract

Read online

This paper proposes a radio frequency (RF) rectifier topology for low-power wireless power transmission (WPT) applications in the X band. The rectifier consists of a biased PMOS pair and is matched to the RF signal source impedance using a PCB transmission line (TL) matching network. It is demonstrated that a clever optimization of the bias voltage enables the rectifier to achieve greater sensitivity and efficiency than previous works at X band. The rectifier was designed in a 45 nm silicon-on-insulator (SOI) process and operates at a frequency of 9.64 GHz. It achieves a power conversion efficiency (PCE) of 4% and 46% at power levels of −35 dBm and −10 dBm, respectively.

Keywords