Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture

Abstract

We report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were equal to 5 × 1011 Jones (Vb = +0.1 V, λ = 5 μm) and 2.6 × 1010 Jones (Vb = -0.4 V, λ = 9 μm). The corresponding values of responsivity and quantum efficiency were 1.6 A/W and 39% (MWIR) and 1.3 A/W and 17% (LWIR).

Keywords

• Optoelectronic materials
• nanostructures
• InAs/GaSb strained layer superlattices (SLS)