Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Shiben Hu; Kuankuan Lu; Honglong Ning; Rihui Yao; Yanfen Gong; Zhangxu Pan; Chan Guo; Jiantai Wang; Chao Pang; Zheng Gong; Junbiao Peng

doi:10.3390/nano11020522

Nanomaterials (Feb 2021)

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Shiben Hu,
Kuankuan Lu,
Honglong Ning,
Rihui Yao,
Yanfen Gong,
Zhangxu Pan,
Chan Guo,
Jiantai Wang,
Chao Pang,
Zheng Gong,
Junbiao Peng

Affiliations

Shiben Hu: Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Kuankuan Lu: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China
Honglong Ning: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China
Rihui Yao: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China
Yanfen Gong: Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Zhangxu Pan: Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Chan Guo: Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Jiantai Wang: Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Chao Pang: Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Zheng Gong: Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510651, China
Junbiao Peng: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China

DOI: https://doi.org/10.3390/nano11020522
Journal volume & issue: Vol. 11, no. 2
p. 522

Abstract

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In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (μ-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm2/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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