Nanomaterials (Oct 2022)

Regulation of Thermal Emission Position in Biased Graphene

  • Yansong Fan,
  • Zhengzhuo Zhang,
  • Zhihong Zhu,
  • Jianfa Zhang,
  • Wei Xu,
  • Fan Wu,
  • Xiaodong Yuan,
  • Chucai Guo,
  • Shiqiao Qin

DOI
https://doi.org/10.3390/nano12193457
Journal volume & issue
Vol. 12, no. 19
p. 3457

Abstract

Read online

A very attractive advantage of graphene is that its Fermi level can be regulated by electrostatic bias doping. It is of great significance to investigate and control the spatial location of graphene emission for graphene thermal emitters, in addition to tuning the emission intensity and emission spectrum. Here, we present a detailed theoretical model to describe the graphene emission characteristics versus gate voltages. The experimentally observed movement of the emission spot and temperature distribution of graphene emitters are basically in agreement with those from the theoretical model. Our results provide a simple method to predict the behavior of graphene emitters that is beneficial for achieving the spatial dynamic regulation of graphene infrared emission arrays.

Keywords