Experimental and theoretical investigations on effects of hydrostatic pressure on the electrical properties of rhombohedral Sb2Te3

R. Li; Y. H. Guo; B. Xu; Y. Su; J. Yin; C. H. Zhang; Y. D. Xia; Z. G. Liu; Z. Xu; L. C. Wu; Z. T. Song

doi:10.1063/1.3655902

AIP Advances (Dec 2011)

Experimental and theoretical investigations on effects of hydrostatic pressure on the electrical properties of rhombohedral Sb2Te3

R. Li,
Y. H. Guo,
B. Xu,
Y. Su,
J. Yin,
C. H. Zhang,
Y. D. Xia,
Z. G. Liu,
Z. Xu,
L. C. Wu,
Z. T. Song

Affiliations

R. Li: Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Y. H. Guo: Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
B. Xu: Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Y. Su: Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
J. Yin: Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
C. H. Zhang: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710046, P. R. China
Y. D. Xia: Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Z. G. Liu: Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
Z. Xu: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710046, P. R. China
L. C. Wu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Z. T. Song: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China

DOI: https://doi.org/10.1063/1.3655902
Journal volume & issue: Vol. 1, no. 4
pp. 042115 – 042115-8

Abstract

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We have investigated the effect of the hydrostatic pressure on the electrical properties of the rhombohedral phase change material Sb2Te3 both experimentally and theoretically. The resistance can be reduced by 24.9% when the applied hydrostatic pressure reaches 0.377 GPa in the experiment, which is consistent with the results of the calculations by using the first principles theoretical method. The increase of the conductivity of Sb2Te3 under the hydrostatic pressure can be ascribed to the reduction of the electronic band gap.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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