Frontiers in Physics (Oct 2019)
Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature
Abstract
We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of the three gates. From the statistics of the signals, we optimized the voltage pulse such that a single electron was intentionally captured in the potential well, and the retention time of approximately 10 ms was observed in this memory operation. This study indicates that a single electron effect can be controllable in a form of RTSs at room temperature by electrically defining a potential well.
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