Nanoscale Research Letters (Jan 2011)

Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well

  • Zhang Xiuwen,
  • Ye Huiqi,
  • Hu Changcheng,
  • Wang Gang,
  • Zhao Hongming,
  • Tian Haitao,
  • Wang Wenxin,
  • Liu Baoli

Journal volume & issue
Vol. 6, no. 1
p. 520

Abstract

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Abstract The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/Al x Ga1-x As quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges from the combined effect of Dresselhaus spin-orbit coupling plus asymmetric potential gradients. We also exploit the temperature dependence of spin-splitting energy. Both the anisotropy of spin splitting and the in-plane effective g-factor decrease with increasing temperature. PACS: 78.47.jm, 71.70.Ej, 75.75.+a, 72.25.Fe,

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