AIP Advances (Apr 2015)

Novel type-II material system for laser applications in the near-infrared regime

  • C. Berger,
  • C. Möller,
  • P. Hens,
  • C. Fuchs,
  • W. Stolz,
  • S. W. Koch,
  • A. Ruiz Perez,
  • J. Hader,
  • J. V. Moloney

DOI
https://doi.org/10.1063/1.4917180
Journal volume & issue
Vol. 5, no. 4
pp. 047105 – 047105-6

Abstract

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The design and experimental realization of a type-II “W”-multiple quantum well heterostructure for emission in the λ > 1.2 μm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory–experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.