Journal of Telecommunications and Information Technology (Jun 2023)

PaperThe Impact of ExternallyApplied Mechanical Stress on Analogand RF Performances of SOI MOSFETs

  • Mostafa Emam,
  • Samer Houri,
  • Danielle Vanhoenacker-Janvier,
  • Jean-Pierre Raskin

DOI
https://doi.org/10.26636/jtit.2009.4.957
Journal volume & issue
no. 4

Abstract

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his paper presents a complete study of the impactof mechanical stress on the performance of SOI MOSFETs.This investigation includes dc, analog and RF characteristics.Parameters of a small-signal equivalent circuit are also ex-tracted as a function of applied mechanical stress. Piezore-sistance coefficient is shown to be a key element in describingthe enhancement in the characteristics of the device due tomechanical stress.

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