Strain-engineered inverse charge-funnelling in layered semiconductors

Adolfo De Sanctis; Iddo Amit; Steven P. Hepplestone; Monica F. Craciun; Saverio Russo

doi:10.1038/s41467-018-04099-7

Nature Communications (Apr 2018)

Strain-engineered inverse charge-funnelling in layered semiconductors

Adolfo De Sanctis,
Iddo Amit,
Steven P. Hepplestone,
Monica F. Craciun,
Saverio Russo

Affiliations

Adolfo De Sanctis: Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter
Iddo Amit: Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter
Steven P. Hepplestone: Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter
Monica F. Craciun: Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter
Saverio Russo: Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter

DOI: https://doi.org/10.1038/s41467-018-04099-7
Journal volume & issue: Vol. 9, no. 1
pp. 1 – 7

Abstract

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The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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