InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

David Z. Ting; Sir B. Rafol; Arezou Khoshakhlagh; Alexander Soibel; Sam A. Keo; Anita M. Fisher; Brian J. Pepper; Cory J. Hill; Sarath D. Gunapala

doi:10.3390/mi11110958

Micromachines (Oct 2020)

InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

David Z. Ting,
Sir B. Rafol,
Arezou Khoshakhlagh,
Alexander Soibel,
Sam A. Keo,
Anita M. Fisher,
Brian J. Pepper,
Cory J. Hill,
Sarath D. Gunapala

Affiliations

David Z. Ting: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Sir B. Rafol: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Arezou Khoshakhlagh: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Alexander Soibel: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Sam A. Keo: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Anita M. Fisher: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Brian J. Pepper: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Cory J. Hill: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Sarath D. Gunapala: NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA

DOI: https://doi.org/10.3390/mi11110958
Journal volume & issue: Vol. 11, no. 11
p. 958

Abstract

Read online

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

About the journal

Abstract

Keywords