Application Prospects of Different Structures and New Materials in Silicon Based Photodetectors

Abstract

Silicon based photodetector is the core device in silicon photonic integrated circuit, which plays a key role in efficient target detection and accurate target tracking in missile guidance system. This paper summarizes the research progress and application prospects of silicon based photodetector at home and abroad, and discusses the impact of different structures and materials on the detector performance. By reviewing relevant literatures and analyzing research results, it emphasis on the application of PIN structures, Schottky structures, GeSn materials, and two-dimensional materials in silicon-based photodetectors. With further research, the response speed and sensitivity of silicon-based photodetectors have been significantly improved, and the detection demand for a wide range from ultraviolet to infrared has been achieved to improve the responsiveness of silicon based photodetectors, shorten the response time and reduce the dark current, also explore new structures and materials to further expand the application range of silicon-based photodetectors in infrared imaging and optical communication systems.

Keywords

• |silicon base|silicon photonics|silicon photonic device|photodetector|missile guidance|infrared imaging