Journal of Aeronautical Materials (Oct 2018)

Research Progress in Preparation and Crystallization Technologies of Amorphous ITO Film

  • LI Jiaming,
  • JIANG Liangbao,
  • CHEN Mu,
  • LI Xiaoyu,
  • WEI Youxiu,
  • ZHANG Xiaofeng,
  • MA Yibo,
  • YAN Yue

DOI
https://doi.org/10.11868/j.issn.1005-5053.2018.000035
Journal volume & issue
Vol. 38, no. 5
pp. 24 – 35

Abstract

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Transparent conductive oxide films have been widely used in liquid crystal displays, solar cells, electrochromic windows, gas sensors, curtain wall glass, heat-transfer glass for aircraft and high-speed trains (de-icing and defogging). The study of its preparation and treatment methods is also crucial and important. In order to prepare a highly transmissive and highly conductive ITO film, it is generally obtained by two methods: a crystalline high-quality thin film is deposited by a high-temperature preparation method directly, and an amorphous film is deposited at room temperature and then heat-treated. However, for substrates that are not resistant to high temperatures, they cannot be exposed to high temperatures for long periods of time. Therefore, it is significant to study the rapid heat treatment crystallization method, aiming at not only ensuring the application requirements of the ITO film, but also reducing the adverse effect of the crystallization method on the substrate. According to different application backgrounds and application requirements, selecting the appropriate preparation method and crystallization method are the key issues to obtaining highly transmissive and highly conductive films. This paper summarizes the current research progress of crystallization methods of ITO transparent conductive oxide films both at home and abroad. By comparing the mechanism, advantages and disadvantages of different thin film crystallization methods, it is found that the infrared annealing, laser annealing, and flash lamp annealing can achieve rapid crystallization of the thin film, and the temperature of substrate is lower than the temperature of film during the process. These methods are expected to replace the conventional furnace annealing crystallization method used in current commercial production for improving production efficiency, saving production costs, obtaining high-quality and high-performance transparent conductive oxide film. These methods are expected to be more widely used.

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