Measuring electric fields with 4D-STEM: Demonstration of pitfalls by the example of GaN and SiGe

• Grieb Tim,
• Mahr Christoph,
• Krause Florian F.,
• Müller-Caspary Knut,
• Schowalter Marco,
• Eickhoff Martin,
• Rosenauer Andreas

Affiliations

Grieb Tim

Institute of Solid State Physics, University of Bremen

Mahr Christoph

Institute of Solid State Physics, University of Bremen

Krause Florian F.

Institute of Solid State Physics, University of Bremen

Müller-Caspary Knut

Department of Chemistry and Centre for NanoScience, Ludwig-Maximilians-Universität München

Schowalter Marco

Institute of Solid State Physics, University of Bremen

Eickhoff Martin

Institute of Solid State Physics, University of Bremen

Rosenauer Andreas

Institute of Solid State Physics, University of Bremen