Structure and Optoelectronic Properties of Perovskite-like (PEA)₂PbBr₃Cl on AlN/Sapphire Substrate Heterostructure

Abstract

This study presents the structure and optoelectronic properties of a perovskite-like (PEA)2PbBr3Cl material on an AlN/sapphire substrate heterostructure prepared using spin coating. The AlN/sapphire substrate comprised a 2 μm thick AlN epilayer on a sapphire wafer deposited via metal–organic chemical vapor deposition (MOCVD). The peak position of (PEA)2PbBr3Cl photoluminescence (PL) on the AlN/sapphire substrate heterostructure was 372 nm. The emission wavelength ranges of traditional lead halide perovskite light-emitting diodes are typically 410 to 780 nm, corresponding to the range of purple to deep red as the ratio of halide in the perovskite material changes. This indicates the potential for application as a UV perovskite light-emitting diode. In this study, we investigated the contact characteristics between Ag metal and the (PEA)2PbBr3Cl layer on an AlN/sapphire substrate heterostructure, which improved after annealing in an air environment due to the tunneling effect of the thermionic-field emission (TFE) mechanism.

Keywords

• perovskite
• AlN/sapphire substrate
• heterostructure
• UV emission