Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution

Taehwan Moon; Hae Jun Jung; Yu Jin Kim; Min Hyuk Park; Han Joon Kim; Keum Do Kim; Young Hwan Lee; Seung Dam Hyun; Hyeon Woo Park; Sang Woon Lee; Cheol Seong Hwang

doi:10.1063/1.4967280

APL Materials (Apr 2017)

Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution

Taehwan Moon,
Hae Jun Jung,
Yu Jin Kim,
Min Hyuk Park,
Han Joon Kim,
Keum Do Kim,
Young Hwan Lee,
Seung Dam Hyun,
Hyeon Woo Park,
Sang Woon Lee,
Cheol Seong Hwang

Affiliations

Taehwan Moon: Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, South Korea
Hae Jun Jung: Department of Physics and Division of Energy Systems Research, Ajou University, Suwon, Gyeonggi 443-749, South Korea
Yu Jin Kim: Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, South Korea
Min Hyuk Park: Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, South Korea
Han Joon Kim: Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, South Korea
Keum Do Kim: Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, South Korea
Young Hwan Lee: Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, South Korea
Seung Dam Hyun: Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, South Korea
Hyeon Woo Park: Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, South Korea
Sang Woon Lee: Department of Physics and Division of Energy Systems Research, Ajou University, Suwon, Gyeonggi 443-749, South Korea
Cheol Seong Hwang: Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, South Korea

DOI: https://doi.org/10.1063/1.4967280
Journal volume & issue: Vol. 5, no. 4
pp. 042301 – 042301-7

Abstract

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Time domain electric pulse measurements were conducted on a capacitor consisting of a Pt film as the top electrode, atomic-layer-deposited 6.5-nm-thick amorphous Al2O3 as the dielectric layer, and two-dimensional electron gas (2DEG) at the interface between Al2O3 and SrTiO3 as the bottom electrode. The sample showed highly useful current-voltage characteristics as the selector in cross-bar array resistance switching random access memory. The long-term (order of second) variation in the leakage current when the Pt electrode was positively biased was attributed to the field-induced migration of oxygen vacancies between the interior of the Al2O3 and the 2DEG region. Relaxation of the vacancy concentration occurred even at room temperature.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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