AIP Advances (Nov 2021)

A review on low-dimensional novel optoelectronic devices based on carbon nanotubes

  • Yu-Tao Li,
  • Kuan Sun,
  • Di Luo,
  • Yi-Ming Wang,
  • Lei Han,
  • Hang Liu,
  • Xiao-Liang Guo,
  • Du-Li Yu,
  • Tian-Ling Ren

DOI
https://doi.org/10.1063/5.0063774
Journal volume & issue
Vol. 11, no. 11
pp. 110701 – 110701-20

Abstract

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With the development of integrated circuits according to Moore’s law, traditional silicon-based devices have gradually reached their performance limitation. Nanoelectronics based on carbon nanomaterials provides a broad prospect for the continuation of Moore’s law. In particular, in the field of optoelectronic devices, it is necessary to further develop new types of nano-optoelectronic devices. Carbon nanotubes (CNTs) are one of the representative materials of nanoelectronics with excellent electrical and optical properties, e.g., high mobility, suitable band structure, and good infrared absorption. The application of CNTs in optoelectronic devices is a very attractive research topic, which has been developed rapidly in recent years. Until now, various prototypes of CNT-based optoelectronic devices have been developed. In this Review, we briefly introduce the structure and photoelectric properties of CNTs. Then, according to different photo-electron coupling mechanisms, four types of CNTs based on optoelectronic devices are introduced in detail, namely, solar cells, photodetectors, light-emitting diodes, and lasers. Intrinsic and composite CNT-based optoelectronic devices are presented in order to describe the development of CNT-based optoelectronic devices. Finally, different material preparation, separation, and mixing methods of CNTs are discussed, which are the methods for basic material preparation for the fabrication of high performance CNT-based optoelectronic devices. An in-depth study of the development trend of CNT-based optoelectronic devices will contribute to the future development of novel high-performance nanoelectronic devices.