Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Perry C. Grant; Joe Margetis; Yiyin Zhou; Wei Dou; Grey Abernathy; Andrian Kuchuk; Wei Du; Baohua Li; John Tolle; Jifeng Liu; Greg Sun; Richard A. Soref; Mansour Mortazavi; Shui-Qing Yu

doi:10.1063/1.5020035

AIP Advances (Feb 2018)

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Perry C. Grant,
Joe Margetis,
Yiyin Zhou,
Wei Dou,
Grey Abernathy,
Andrian Kuchuk,
Wei Du,
Baohua Li,
John Tolle,
Jifeng Liu,
Greg Sun,
Richard A. Soref,
Mansour Mortazavi,
Shui-Qing Yu

Affiliations

Perry C. Grant: Arktonics LLC, 1339 S. Pinnacle Dr., Fayetteville, AR 72701, USA
Joe Margetis: ASM, 3440 East University Drive, Phoenix, AZ 85034, USA
Yiyin Zhou: Arktonics LLC, 1339 S. Pinnacle Dr., Fayetteville, AR 72701, USA
Wei Dou: Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Grey Abernathy: Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Andrian Kuchuk: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Wei Du: Department of Electrical Engineering, Wilkes University, Wilkes-Barre, PA 18766, USA
Baohua Li: Arktonics LLC, 1339 S. Pinnacle Dr., Fayetteville, AR 72701, USA
John Tolle: ASM, 3440 East University Drive, Phoenix, AZ 85034, USA
Jifeng Liu: Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, USA
Greg Sun: Department of Engineering, University of Massachusetts Boston, Boston, MA 02125, USA
Richard A. Soref: Department of Engineering, University of Massachusetts Boston, Boston, MA 02125, USA
Mansour Mortazavi: Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
Shui-Qing Yu: Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA

DOI: https://doi.org/10.1063/1.5020035
Journal volume & issue: Vol. 8, no. 2
pp. 025104 – 025104-7

Abstract

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This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.92Sn0.08 single quantum well. By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.86Sn0.14 QW was achieved, which is unattainable by using only a Ge buffer. Band structure calculations and optical transition analysis revealed that the quantum well features type-I band alignment. The photoluminescence spectra showed dramatically increased quantum well peak intensity at lower temperature, confirming that the Ge0.86Sn0.14 quantum well is a direct bandgap material.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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