Single event sensitivity analysis of bandgap reference

Abstract

Based on the conventional design of bandgap reference using 0.18 μm process, the single event transient pulse current model was used to analyze the single event sensitivity of common CMOS two-stage amplifiers. The vertical type PNP transistor used in the bandgap reference was modeled using TCAD software, and its single event sensitivity in the bandgap reference source was verified by simulation. In the end, the radiation hardened bandgap reference was proposed.

Keywords

• SET
• bandgap reference
• vertical PNP