Optimization of Ternary In_xGa_1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Abstract

Red, green, and blue light InxGa1−xN multiple quantum wells have been grown on GaN/γ-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InxGa1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InxGa1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InxGa1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.

Keywords

• full-color GaN micro-LEDs
• In_xGa_1-xN-based quantum wells (QW)
• plasma-assisted molecular beam epitaxy (PAMBE)