Interface trap charges associated reliability analysis of Si/Ge heterojunction dopingless TFET

Abstract

Abstract The interface trap charges (ITC) associated reliability analysis of a charge‐plasma based asymmetric double‐gate (ADG) dopingless tunnel field effect transistor (DLTFET) with Si/Ge heterojunction and high‐κ gate dielectric (HJADGDLTFET) has been studied. The HJADGDLTFET uses silicon at the drain and the channel region, and germanium at the source region, which enhances the band‐to‐band tunnelling at the source‐channel junction, and hence drive current is increased by one order concerning ADGDLTFET. Also, ADG and high‐κ dielectric (HfO2) have been used to maintain low off‐state current values. The primary intention of this work is to investigate the impact of ITC for HJADGDLTFET and compare it for ADGDLTFET considering DC, analog/RF, and linearity parameters such as transfer characteristics, electric‐field, electric potential, first‐, second‐, and third‐order transconductances (gm1, gm2, and gm3), gate‐to‐drain capacitance (Cgd), cut‐off frequency (fT), gain–bandwidth product, device efficiency, second‐ and third‐order voltage intercept points (VIP2, VIP3), third‐order input intercept points (IIP3), and third‐order intermodulation distortion. The ATLAS simulation results show that the HJADGDLTFET is more immune to ITC variation than conventional ADGDLTFET concerning different polarities of ITC available at the semiconductor‐oxide interface.

Keywords

• Ge‐Si alloys
• hafnium compounds
• high‐k dielectric thin films
• intermodulation distortion
• semiconductor device models
• semiconductor device reliability