Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

Hoon Min Kim; Useong Kim; Chulkwon Park; Hyukwoo Kwon; Kookrin Char

doi:10.1063/1.4952609

APL Materials (May 2016)

Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

Hoon Min Kim,
Useong Kim,
Chulkwon Park,
Hyukwoo Kwon,
Kookrin Char

Affiliations

Hoon Min Kim: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 151-747, South Korea
Useong Kim: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 151-747, South Korea
Chulkwon Park: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 151-747, South Korea
Hyukwoo Kwon: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 151-747, South Korea
Kookrin Char: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 151-747, South Korea

DOI: https://doi.org/10.1063/1.4952609
Journal volume & issue: Vol. 4, no. 5
pp. 056105 – 056105-7

Abstract

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We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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