Communications Materials (Mar 2023)
Defect engineering of silicon with ion pulses from laser acceleration
- Walid Redjem,
- Ariel J. Amsellem,
- Frances I. Allen,
- Gabriele Benndorf,
- Jianhui Bin,
- Stepan Bulanov,
- Eric Esarey,
- Leonard C. Feldman,
- Javier Ferrer Fernandez,
- Javier Garcia Lopez,
- Laura Geulig,
- Cameron R. Geddes,
- Hussein Hijazi,
- Qing Ji,
- Vsevolod Ivanov,
- Boubacar Kanté,
- Anthony Gonsalves,
- Jan Meijer,
- Kei Nakamura,
- Arun Persaud,
- Ian Pong,
- Lieselotte Obst-Huebl,
- Peter A. Seidl,
- Jacopo Simoni,
- Carl Schroeder,
- Sven Steinke,
- Liang Z. Tan,
- Ralf Wunderlich,
- Brian Wynne,
- Thomas Schenkel
Affiliations
- Walid Redjem
- Department of Electrical Engineering and Computer Science, University of California
- Ariel J. Amsellem
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Frances I. Allen
- Department of Materials Science and Engineering, University of California
- Gabriele Benndorf
- Felix Bloch Institute for Solid State Physics, University Leipzig
- Jianhui Bin
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Stepan Bulanov
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Eric Esarey
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Leonard C. Feldman
- Rutgers University, Department of Physics & Astronomy
- Javier Ferrer Fernandez
- Centro Nacional de Aceleradores, Universidad de Sevilla, CSIC and Junta de Andalucía
- Javier Garcia Lopez
- Centro Nacional de Aceleradores, Universidad de Sevilla, CSIC and Junta de Andalucía
- Laura Geulig
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Cameron R. Geddes
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Hussein Hijazi
- Rutgers University, Department of Physics & Astronomy
- Qing Ji
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Vsevolod Ivanov
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Boubacar Kanté
- Department of Electrical Engineering and Computer Science, University of California
- Anthony Gonsalves
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Jan Meijer
- Felix Bloch Institute for Solid State Physics, University Leipzig
- Kei Nakamura
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Arun Persaud
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Ian Pong
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Lieselotte Obst-Huebl
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Peter A. Seidl
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Jacopo Simoni
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Carl Schroeder
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Sven Steinke
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Liang Z. Tan
- Molecular Foundry, Lawrence Berkeley National Laboratory
- Ralf Wunderlich
- Felix Bloch Institute for Solid State Physics, University Leipzig
- Brian Wynne
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- Thomas Schenkel
- Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory
- DOI
- https://doi.org/10.1038/s43246-023-00349-4
- Journal volume & issue
-
Vol. 4,
no. 1
pp. 1 – 10
Abstract
Defect engineering and doping of semiconductors by ion irradiation are essential in large-scale integration of electronic devices. Here, intense ion pulses from a laser-accelerator, with flux levels up to 1022 ions cm-2 s-1, are used to induce and optimize silicon color centers and photon emitters in the telecom band.
