Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

Qiang Li; Qifan Zhang; Ransheng Chen; Haoran Zhang; Mingdi Wang; Jingping Zhu; Xiaoliang Wang; Yuhuai Liu; Feng Yun

doi:10.3390/cryst12060777

Crystals (May 2022)

Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

Qiang Li,
Qifan Zhang,
Ransheng Chen,
Haoran Zhang,
Mingdi Wang,
Jingping Zhu,
Xiaoliang Wang,
Yuhuai Liu,
Feng Yun

Affiliations

Qiang Li: Key Laboratory for Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an 710049, China
Qifan Zhang: School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Ransheng Chen: School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Haoran Zhang: School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Mingdi Wang: School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Jingping Zhu: School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Xiaoliang Wang: Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Yuhuai Liu: National Centre for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China
Feng Yun: School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

DOI: https://doi.org/10.3390/cryst12060777
Journal volume & issue: Vol. 12, no. 6
p. 777

Abstract

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Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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