Advances in Electrical and Electronic Engineering (Jan 2007)

Epitaxial Layers of InP Doped With Rare Elements for Use in Radiation Detector

  • Halyna Kozak,
  • Bruno Sopko,
  • Karel Zdansky

Journal volume & issue
Vol. 6, no. 1
pp. 16 – 18

Abstract

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We have focused on the investigation of the impact of Ce, Eu, Tm, Eu2O3 and Tm2O3 addition in LPE growth process on the properties of InP layers in the context of their application in detector structures.

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