Nature Communications (Jul 2020)
Spatial defects nanoengineering for bipolar conductivity in MoS2
- Xiaorui Zheng,
- Annalisa Calò,
- Tengfei Cao,
- Xiangyu Liu,
- Zhujun Huang,
- Paul Masih Das,
- Marija Drndic,
- Edoardo Albisetti,
- Francesco Lavini,
- Tai-De Li,
- Vishal Narang,
- William P. King,
- John W. Harrold,
- Michele Vittadello,
- Carmela Aruta,
- Davood Shahrjerdi,
- Elisa Riedo
Affiliations
- Xiaorui Zheng
- Tandon School of Engineering, New York University
- Annalisa Calò
- Tandon School of Engineering, New York University
- Tengfei Cao
- CUNY Graduate Center, Ph.D. Program in Physics and Chemistry
- Xiangyu Liu
- Tandon School of Engineering, New York University
- Zhujun Huang
- Tandon School of Engineering, New York University
- Paul Masih Das
- Department of Physics and Astronomy, University of Pennsylvania
- Marija Drndic
- Department of Physics and Astronomy, University of Pennsylvania
- Edoardo Albisetti
- Tandon School of Engineering, New York University
- Francesco Lavini
- Tandon School of Engineering, New York University
- Tai-De Li
- CUNY Graduate Center Advanced Science Research Center
- Vishal Narang
- CUNY Graduate Center Advanced Science Research Center
- William P. King
- Department of Mechanical Science and Engineering, University of Illinois
- John W. Harrold
- Department of Chemistry and Environmental Science, Medgar Evers College of CUNY, 2010
- Michele Vittadello
- CUNY Graduate Center, Ph.D. Program in Physics and Chemistry
- Carmela Aruta
- National Research Council CNR-SPIN, University of Roma Tor Vergata
- Davood Shahrjerdi
- Tandon School of Engineering, New York University
- Elisa Riedo
- Tandon School of Engineering, New York University
- DOI
- https://doi.org/10.1038/s41467-020-17241-1
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 12
Abstract
Bipolar conductivity is fundamental for electronic devices based on two-dimensional semiconductors. Here, the authors report on-demand p- and n-doping of monolayer MoS2 via defects engineering using thermochemical scanning probe lithography, and achieve a p-n junction with rectification ratio over 104.
