Nature Communications (Mar 2023)

Reducing charge noise in quantum dots by using thin silicon quantum wells

  • Brian Paquelet Wuetz,
  • Davide Degli Esposti,
  • Anne-Marije J. Zwerver,
  • Sergey V. Amitonov,
  • Marc Botifoll,
  • Jordi Arbiol,
  • Amir Sammak,
  • Lieven M. K. Vandersypen,
  • Maximilian Russ,
  • Giordano Scappucci

DOI
https://doi.org/10.1038/s41467-023-36951-w
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 9

Abstract

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Charge noise degrades the performance of spin qubits hindering scalability. Here the authors engineer the heterogeneous material stack in 28Si/SiGe gate-defined quantum dots, to improve the scattering properties and to reduce charge noise.