Electrophysical characteristics of initial and irradiated GаAsP LEDs structures

Abstract

ight emitting diodes based on gallium arsenide-phosphide solid solutions were studied. Negative differential resistance regions were identified at lower temperatures T ≤ 130 K. Irradiation of diodes by electrons (E = 2 MeV) leads to the increase in the differential resistance, change in the contact potential difference, and a drop in the radiation intensity. These effects are due to the influence of deep radiation defects levels and surface states, activated by high levels of the ionization excitation peculiar to electron irradiation.

Keywords

• GaAsP
• light emitting diode
• negative differential resistance