A Schottky diode and FET‐paralleled analogue predistorter for 5G small‐cell base stations

Abstract

Abstract This letter presents an analogue predistorter (APD) named Schottky diode (SD) and field effect transistor (FET)‐paralleled APD (SDFP‐APD) for the fifth‐generation (5G) mobile system, which is composed of an FET paralleled with two SDs. The simulation results show that the SDFP‐APD has the best compression compensation for the radio frequency power amplifier (RFPA) among the SD‐APD, the FET‐APD and the SDFP‐APD. Furthermore, the measurement results illustrate that the SDFP‐APD can improve the adjacent channel leakage ratio of the RFPA with the best linearisation performance among the three APDs and reduce the error vector magnitude while applying a 100‐MHz bandwidth 5G new radio signal. The proposed SDPF‐APD can be a promising linearisation technique for 5G small‐cell base stations.

Keywords

• Amplifiers
• Microwave circuits and devices
• Mobile radio systems
• Junction and barrier diodes