PREDICTION OF INFORMATION STORAGE TIME AFTER POWER OFF FOR INTEGRATED CIRCUITS OF EEPROM

Abstract

For crystals of EEPROM integrated circuits (ICs) a method for predicting of information storage time after the power is turned off is provided. Prediction is performed using the accelerated tests, which are considered as the temperature effects that accompany the technological operations in the premises of the crystal body and the ICs assembly. All technological IC assembly operations have complex effect. For this effect, estimated coefficient of acceleration tests is founded. Also for normal operating conditions of the ICs it's found the guaranteed time of information storage after power off.

Keywords

• integrated circuits
• eeprom
• information storage time
• power is turned off