Pulse Laser Sulfur-Hyperdoping of Germanium and High Quantum Efficiency Photodiodes

Keye Sun; Mool C. Gupta

doi:10.1109/JPHOT.2016.2611444

IEEE Photonics Journal (Jan 2016)

Pulse Laser Sulfur-Hyperdoping of Germanium and High Quantum Efficiency Photodiodes

Keye Sun,
Mool C. Gupta

Affiliations

Keye Sun: Department of Electrical and Computer Engineering University of Virginia, Charlottesville, VA, USA
Mool C. Gupta: Department of Electrical and Computer Engineering University of Virginia, Charlottesville, VA, USA

DOI: https://doi.org/10.1109/JPHOT.2016.2611444
Journal volume & issue: Vol. 8, no. 5
pp. 1 – 10

Abstract

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Germanium was successfully hyperdoped with sulfur by means of nanosecond pulse laser and SF6 gas. A photodiode was fabricated based on sulfur-hyperdoped germanium. Rectifying current-voltage characteristics were observed for the device. The sulfur-hyperdoped germanium photodiode showed an internal quantum efficiency close to 150% from visible to near infrared and increased to 275% for the ultraviolet region. The -3 dB bandwidth was measured to be 20 MHz. Sulfur was demonstrated to be an effective deep level dopant for realizing high-performance germanium photodiodes.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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