Polarization Self-Screened Multiple Quantum Wells for Deep Ultraviolet Light-Emitting Diodes to Enhance the Optical Power

Chunshuang Chu; Kangkai Tian; Hua Shao; Jiamang Che; Yonghui Zhang; Zi-Hui Zhang

doi:10.1109/JPHOT.2021.3115341

IEEE Photonics Journal (Jan 2021)

Polarization Self-Screened Multiple Quantum Wells for Deep Ultraviolet Light-Emitting Diodes to Enhance the Optical Power

Chunshuang Chu,
Kangkai Tian,
Hua Shao,
Jiamang Che,
Yonghui Zhang,
Zi-Hui Zhang

Affiliations

Chunshuang Chu: ORCiD; The authors are with the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China
Kangkai Tian: ORCiD; The authors are with the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China
Hua Shao: ORCiD; The authors are with the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China
Jiamang Che: ORCiD; The authors are with the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China
Yonghui Zhang: ORCiD; The authors are with the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China
Zi-Hui Zhang: ORCiD; The authors are with the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China

DOI: https://doi.org/10.1109/JPHOT.2021.3115341
Journal volume & issue: Vol. 13, no. 5
pp. 1 – 5

Abstract

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We experimentally and numerically propose a deep ultraviolet light-emitting diode (DUV LED) possessing the quantum barriers (QBs) with the gradually reduced Al composition along the [0001] orientation. The induced negative polarization bulk charges in the graded QBs can screen the positive polarization sheet charges at the QB/quantum well (QW) interface, i.e., generating the polarization self-screening effect, which weakens the electric field in the QWs. The polarization self-screened feature is important in enhancing the overlap level of the electron and hole wave functions within the active region and increasing the hole injection, thus improving the electroluminescence intensity and the optical power.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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