Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source

Chaoyu Ning; Shuzhen Zou; Haijuan Yu; Jiexi Zuo; Xuechun Chen; Shuang Xu; Shifei Han; Xinyao Li; Wenjuan Wu; Chaojian He; Xuechun Lin

doi:10.1017/hpl.2023.72

High Power Laser Science and Engineering (Jan 2023)

Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source

Chaoyu Ning,
Shuzhen Zou,
Haijuan Yu,
Jiexi Zuo,
Xuechun Chen,
Shuang Xu,
Shifei Han,
Xinyao Li,
Wenjuan Wu,
Chaojian He,
Xuechun Lin

Affiliations

Chaoyu Ning: ORCiD; Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Shuzhen Zou: Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Haijuan Yu: Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Jiexi Zuo: ORCiD; Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Xuechun Chen: ORCiD; Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Shuang Xu: ORCiD; Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Shifei Han: Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Xinyao Li: ORCiD; Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Wenjuan Wu: Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Chaojian He: Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Xuechun Lin: Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China

DOI: https://doi.org/10.1017/hpl.2023.72
Journal volume & issue: Vol. 11

Abstract

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In this work, we experimentally investigate the dependence of the stimulated Raman scattering (SRS) effect on the seed linewidth of a high-power nanosecond superfluorescent fiber source (ns-SFS). The results reveal that the SRS in the ns-SFS amplifier is significantly influenced by the full width at half maximum (FWHM) of the ns-SFS seed, and there is an optimal FWHM linewidth of 2 nm to achieve the lowest SRS in our case. The first-order SRS power ratio increases rapidly when the seed’s linewidth deviates from the optimal FWHM linewidth. By power scaling the ns-SFS seed with the optimal FWHM linewidth, a narrowband all-fiberized ns-SFS amplifier is achieved with a maximum average power of 602 W, pulse energy of 24.1 mJ and corresponding peak power of 422.5 kW. This is the highest average power and pulse energy achieved for all-fiberized ns-SFS amplifiers to the best of our knowledge.

Published in High Power Laser Science and Engineering

ISSN: 2095-4719 (Print); 2052-3289 (Online)
Publisher: Cambridge University Press
Country of publisher: United Kingdom
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics
Website: https://www.cambridge.org/core/journals/high-power-laser-science-and-engineering

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