n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

Ling Li; Yuantao Zhang; Long Yan; Junyan Jiang; Xu Han; Gaoqiang Deng; Chen Chi; Junfeng Song

doi:10.1063/1.4971272

AIP Advances (Dec 2016)

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

Ling Li,
Yuantao Zhang,
Long Yan,
Junyan Jiang,
Xu Han,
Gaoqiang Deng,
Chen Chi,
Junfeng Song

Affiliations

Ling Li: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Yuantao Zhang: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Long Yan: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Junyan Jiang: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Xu Han: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Gaoqiang Deng: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Chen Chi: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Junfeng Song: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China

DOI: https://doi.org/10.1063/1.4971272
Journal volume & issue: Vol. 6, no. 12
pp. 125204 – 125204-5

Abstract

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n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ∼396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ∼1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ∼3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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