Modelling of electron trajectories inside SEM chamber concerning mirror effect phenomenon

Abstract

A computational investigation is carried out to describe the behaviour of reflected electrons upon a charged insulator sample and producing mirror effect images. A theoretical expression for the scanning electron path equation is derived concerning Rutherford scattering and some electrostatic aspects. The importance of the derived formula come from its correlation among some of the most important parameters that controls the mirror effect phenomena. These parameters, in fact, are the trapped charges, incident angle and the scanning potential which investigated by considering its influences on the incident electrons. A pervious experimental operation requirements are adopted for operating the introduced expression. However, the obtained results are almost encouraged for using the presented expression to simulate the electron trajectory in sense of mirror effect.

Keywords

• insulators, charge trapping, electron mirror effect.