Simulation on Secondary Electron Multiplication Behavior of the Microchannel Plate under DC Mode

Abstract

In this study, a three-dimensional microchannel model of a single hollow-core glass fiber was constructed and the Finite Integral Technique and Monte Carlo method were combined to comprehensively simulate the electron multiplication process in a single channel under DC mode. The electron dynamic trajectory in DC electron emission mode was achieved. The effects of different structural parameters and applied bias voltage on the electron gain and the most probable exit energy at the output end of MCP were investigated. The results show that the electrons with a certain initial current can be continuously and stably multiplied in the channel under DC mode and eventually reach a stable value because of the space charge effect; additionally, the electron gain increases with the increase in the bias angle and DC bias voltage and decreases with the increase in the penetration depth of the MCP output electrode. The electron gain at the output end of the MCP increases with the length-to-diameter ratio under the normalized voltage but shows a maximum value under the constant voltage. The simulation results are consistent with the reported experimental trend and theoretical analyses. The method provides data support for the optimal structural design of the microchannel plate.

Keywords

• microchannel plate
• secondary electron
• DC mode
• electron multiplication
• theoretical simulation